NCE82H140 MOSFET

Type Designator: NCE82H140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 220 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 140 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 158 nC
trⓘ – Rise Time: 42 nS
Cossⓘ – Output Capacitance: 445 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0052 Ohm

NCE82H140 MOSFET price in pakistan

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