TIP147 Transistor
The devices are manufactured in planar technology with a “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
- Monolithic Darlington configuration
- Integrated antiparallel collector-emitter diode
₨250
CompareThe devices are manufactured in planar technology with a “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
- Monolithic Darlington configuration
- Integrated antiparallel collector-emitter diode
The devices are manufactured in planar technology with a “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
- Monolithic Darlington configuration
- Integrated antiparallel collector-emitter diode
TIP147 Transistor Price in Pakistan
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2N3906 PNP Transistor
2N3906 PNP Transistor Features
- Bi-Polar PNP Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Collector Emitter Voltage (VCE) is 40V
- Collector Base Voltage (VCB) is 40V
- Available in To-92 Package
SKU: n/a
