60h65 igbt in pakistan
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MOSFETs, IGBTs and BJTs
G60H65DFB IGBT
G60H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High-frequency converters
SKU: G60H65DFB-IC