FGY75T120SQDN IGBT
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MOSFETs, IGBTs and BJTs
FGY75T120SQDN IGBT FGY75T120
FGY75T120SQDN IGBT 75T120 Specifications:
- Type Designator: FGY75T120SQDN
- Type: IGBT + Anti-Parallel Diode
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 790
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Maximum Gate-Emitter Voltage |Vge|, V: 20
- Maximum Collector Current |Ic| @25℃, A: 150
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 96
- Collector Capacity (Cc), typ, pF: 242
- Total Gate Charge (Qg), typ, nC: 399
- Package: TO247
SKU: n/a
