IRFP4468 MOSFET
Showing the single result
-
MOSFETs, IGBTs and BJTs
IRFP4468 MOSFET
IRFP4468 MOSFET Specifications:
- Type Designator: IRFP4468
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 520 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 290 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 360 nC
- Rise Time (tr): 230 nS
- Drain-Source Capacitance (Cd): 1360 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
- Package: TO247AC
SKU: n/a
