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IRFP4468 MOSFET


IRFP4468 MOSFET Specifications:

  • Type Designator: IRFP4468
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 520 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 290 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 360 nC
  • Rise Time (tr): 230 nS
  • Drain-Source Capacitance (Cd): 1360 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
  • Package: TO247AC

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IRFP4468 MOSFET Specifications:

  • Type Designator: IRFP4468
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 520 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 290 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 360 nC
  • Rise Time (tr): 230 nS
  • Drain-Source Capacitance (Cd): 1360 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
  • Package: TO247AC

 

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