1N5819 Schottky Diode has a forward voltage drop of 600mV and a forward current of 1A. Since it has a very low forward voltage drop it can be used in reverse polarity protection circuits, unlike a normal diode which has more than 1V as a forward voltage drop 1N5819 only has a 600mV drop across it when 1A current is flowing through it.
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Diodes
UF4007 Diode
UF4007 Diode Specifications:
- Forward Voltage Drop (VF): 1.1 V at 1 A
- Reverse Voltage (VR): 1000 V
- Average Rectified Forward Current (IO): 1 A
- Peak Forward Surge Current (IFSM): 30 A (8.3 ms half-sine wave)
- Reverse Recovery Time (trr): 50 ns (typical)
- Operating Temperature Range (Tj): -65°C to +175°C
- Storage Temperature Range (Tstg): -65°C to +175°C
- Package Type: DO-41 (Axial Lead)
- Package Weight: 0.35 grams (approximate)
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Diodes
1N4007 Diode Smd
Specifications:
- Forward Voltage Drop (VF): Typically around 0.7V at 1A.
- Reverse Current (IR): Maximum reverse current is in the microampere range.
- Maximum Forward Surge Current (IFSM): Can handle short-duration surges up to a specified current level.
- Operating Temperature Range: Typically rated for operation within a temperature range, ensuring stability under varying environmental conditions.
- Storage Temperature Range: The diode can be stored within a specific temperature range for optimal shelf life.
- Reverse Recovery Time: Specifies the time it takes for the diode to transition from the conducting to non-conducting state when the polarity changes.
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