C1815 NPN Transistor
The C1815 NPN transistor is widely used in commercial and educational projects.
₨3
CompareC1815 NPN Transistor Features
- Collector-Emitter Volt (Vceo): 50V
- Collector-Base Volt (Vcbo): 60V
- Collector Current (Ic): 0.15A
- hfe: 70-700 @ 2mA
- Power Dissipation (Ptot): 400mW
- Current-Gain-Bandwidth (ftotal): 80MHz
- Type: NPN
Based on 0 reviews
Be the first to review “C1815 NPN Transistor”
You must be logged in to post a review.
Related products
-
Transistors
2SD669 Transistor
2SD669 Transistor
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –SKU: n/a -
Transistors
2SC5200 NPN Power Transistor
2SC5200 NPN Power Transistor Features:
- High-power NPN Transistor
- DC Current Gain (hFE) 55 to 160
- Continuous Collector current (IC) is 15A
- Collector-Emitter voltage (VCE) is 230 V
- Collector-Base voltage (VCB) is 230V
- Emitter Base Voltage (VBE) is 5V
- Transition Frequency is 30MHz
- Available in To-264 Package
SKU: n/a -
Transistors
2N3904 NPN Transistor
2N3904 NPN Transistor Features
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Base- Emitter Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Collector-Base Voltage (VCB) is 60V
- Available in To-92 Package
SKU: n/a -
Transistors
MCR100-8 SCR Thyristor 600V 0.8A
With highly sensitive triggering levels, the MCR100-8 SCR are suitable for all applications, where the available gate current limited, such as capacitive discharge ignitions, motor control in kitchen aids, and overvoltage crowbar protection in low power supplies.
SKU: n/a -
There are no reviews yet.