MOSFETs, IGBTs and BJTs
HY1920W IGBT
Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High-frequency converters
₨300
CompareHY1920W IGBT is IGBTs developed using an advanced proprietary trench gate field stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
HY1920W IGBT in Pakistan
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