K40T120 IGBT 40T120
K40T120 IGBT Features:
- Short circuit withstand time – 10us
- Designed for :
– Frequency Converters
– Uninterrupted Power Supply - TrenchStop and Fieldstop technology for 1200 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature-stable behaviour technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat) - Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS-compliant
₨240
CompareK40T120 IGBT Features:
Short circuit withstand time – 10us
Designed for :
– Frequency Converters
– Uninterrupted Power Supply
TrenchStop and Fieldstop technology for 1200 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature-stable behaviour technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS-compliant
Low Loss DuoPack: IGBT in TrenchStop and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
40T120 Igbt price in pakistan
Related products
-
MOSFETs, IGBTs and BJTs
IR2153 IC DIP8 MOSFET Driver
IR2153 IC Features- Integrated 600 V half-bridge gate driver
- 15.6 V zener clamp on VCC
- True micropower start-up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1 V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Excellent latch immunity on all inputs and outputs
- ESd protection on all leads
SKU: n/a -
MOSFETs, IGBTs and BJTs
K75T60 IGBT IKW75N60T 600V 75A
K75T60 IGBT Features and Specifications:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature of 175℃
- Short circuit withstand time 5micro seconds
- Positive temperature coefficient in VCE (sat)
- Very tight parameter distribution
- High ruggedness, temperature-stable behavior
- Very high switching speed
- Low Electro Magnetic Interference
- Very soft and fast recovery anti-parallel Emitter Controlled HE diode
- Pb-free lead plating
- RoHS compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
HIP4082IPZ SMD HIP4082 MOSFET Driver
HIP4082IPZ SMD Specifications:
- Sim Model: No
- Max Bootstrap Supply Voltage (V): 95
- VBIAS (max) (V): 15.0
- Peak Pull-up Current: 1.4 A
- Peak Pull-down Current: 1.3 A
- Turn-On Prop Delay (ns): 75.0
- Turn-Off Prop Delay (ns): 55.0
- Rise Time: 9 ns
- Fall Time: 9 ns
- Input Logic Level: 3.3V/TTL
- Charge Pump: No
- Qualification Level: Standard
- Can Sample: Yes
- $/1K Units: 1.63
- Temperature Range: -55 to +125
SKU: HIP4082IPZ-IC -
MOSFETs, IGBTs and BJTs
IR2186S IC SOP8 MOSFET Driver
IR2186S IC Features
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V and 5 V logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current 4 A / 4 A
- RoHS compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2104 IC DIP8 IR2104S SOP8 Driver
Features and Specifications
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 to 20V
- Undervoltage lockout
- 3.3V, 5V, and 15V input logic compatible
- Cross-conduction prevention logic
- Internally set deadtime
- High-side output in phase with the input
- Shut down input turns off both channels
- Matched propagation delay for both channels
SKU: n/a
