NCEP15T14 MOSFET 15T14
Features
- VDS =150V, ID =140A
RDS(ON) <6.2mΩ @ VGS=10V - Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
₨250
CompareNCEP15T14 MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high-frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
NCEP15T14 MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high-frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
15T14 mosfet price in pakistan
Related products
-
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP352 IC DIP8 TLP352S SOP8 Driver
Features:
- Buffer logic type (totem pole output)
- Output peak current: ±2.5 A (max)
- Operating temperature: -40 to 125 C
- Supply current: 3.0 mA (max)
- Supply voltage: 15 to 30 V
- Threshold input current: 5 mA (max)
- Propagation delay time: 200 ns (max)
- Common-mode transient immunity: ±20 kV/µs (min)
- Isolation voltage: 3750 Vrms (min)
- Safety standards
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF2807 MOSFET 75V
IRF2807 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
K75T60 IGBT IKW75N60T 600V 75A
K75T60 IGBT Features and Specifications:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature of 175℃
- Short circuit withstand time 5micro seconds
- Positive temperature coefficient in VCE (sat)
- Very tight parameter distribution
- High ruggedness, temperature-stable behavior
- Very high switching speed
- Low Electro Magnetic Interference
- Very soft and fast recovery anti-parallel Emitter Controlled HE diode
- Pb-free lead plating
- RoHS compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
HIP4082IBZ SMD HIP4082 MOSFET Driver
HIP4082IBZ SMD Specifications:
- Sim Model: No
- Max Bootstrap Supply Voltage (V): 95
- VBIAS (max) (V): 15.0
- Peak Pull-up Current: 1.4 A
- Peak Pull-down Current: 1.3 A
- Turn-On Prop Delay (ns): 75.0
- Turn-Off Prop Delay (ns): 55.0
- Rise Time: 9 ns
- Fall Time: 9 ns
- Input Logic Level: 3.3V/TTL
- Charge Pump: No
- Qualification Level: Standard
- Can Sample: Yes
- $/1K Units: 1.63
- Temperature Range: -55 to +125
SKU: HIP4082IBZ-IC -
MOSFETs, IGBTs and BJTs
IRF3710 MOSFET 100V
IRF3710 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a
