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YGW40N65F1 IGBT


YGW40N65F1 IGBT Features:

Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 188 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 80 nS
Coesⓘ – Output Capacitance, typ: 100 pF
Qgⓘ – Total Gate Charge, typ: 90 nC

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Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 188 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, type: 1.8 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 80 nS
Coesⓘ – Output Capacitance, type: 100 pF
Qgⓘ – Total Gate Charge, type: 90 nC

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YGW40N65F1 IGBT Price in Pakistan

 

 

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