FDH055N15A MOSFET Specifications
- Type Designator: FDH055N15A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 429 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 118 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 92 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm
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