Transistors
2N2222 NPN Transistor
2N2222 NPN Transistor Features
- Bi-Polar high current NPN Transistor
- DC Current Gain (hFE) is 100
- Continuous Collector current (IC) is 800mA
- Emitter Base Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 30V
- Base Current(IB) is 5mA maximum
- Available in To-92 Package
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Compare2N2222 NPN Transistor has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA. To bias a transistor we have to supply current to the base pin, this current (IB) should be limited to 5mA.
2N2222A is an NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at the ground and will be closed (Forward biased) when a signal is provided to the base pin.
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A1015 PNP Transistor
Features and Technical Specifications:
- Type: PNP
- Power Dissipation: 0.4watts
- High voltage and High current: Vceo = 50v and Ic = 150mA
- Low Noise: 1dB
- Case Material: molded plastic
- Collector power dissipation: 400mW
- DC current gain: 400
- Collector-Emitter and Collector Base breakdown voltage: 50Vdc
- Base Emitter Saturation Voltage: 1.1Vdc
- Collector-Emitter Saturation Voltage: 0.3Vdc
- Base Emitter voltage: 1.45Vdc
- Complementary to 2SC1815
- Operating Temperature and Storage Temperature: -55℃ to +150℃
SKU: n/a
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