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2N2907 PNP Transistor
1 × ₨4
Subtotal: ₨4
Transistors
CA3083 Transistor
Features
• High IC 100mA (Max)
• Low VCE sat (at 50mA) 0.7V (Max)
• Matched Pair (Q1 and Q2)
– VIO (VBE Match) ±5mV (Max)
– IIO (at 1mA) 2.5µA (Max)
• 5 Independent Transistors Plus Separate Substrate
Connection
₨150
CompareCA3083 Transistor is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low current (i.e., 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistor plus a separate terminal for the substrate permit maximum flexibility in circuit design.
Applications
• Signal Processing and Switching Systems Operating
from DC to VHF
• Lamp and Relay Driver
• Differential Amplifier
• Temperature Compensated Amplifier
• Thyristor Firing
CA3083 Transistor Price in Pakistan
3083 Transistor Price in Pakistan
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MCR100-8 SCR Thyristor 600V 0.8A
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Transistors
2N3904 NPN Transistor
2N3904 NPN Transistor Features
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Base- Emitter Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Collector-Base Voltage (VCB) is 60V
- Available in To-92 Package
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Transistors
2SD669 Transistor
2SD669 Transistor
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –SKU: n/a
