Dark Light

G60H65DFB IGBT


G60H65DFB IGBT Features

  • Maximum junction temperature: TJ = 175 °C
  • High-speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

Applications

  • Photovoltaic inverters
  • High-frequency converters

280

Compare

G60H65DFB is IGBT developed using an advanced proprietary trench gate field stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation

60h65 igbt in pakistan

 

Embeded Studio
×

 

Hello!

Click one of our contacts below to chat on WhatsApp

× Contact Us