MOSFETs, IGBTs and BJTs
HY1920P MOSFET
HY1920P MOSFET Specifications:
- Type Designator: HY1920P
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 375 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 90 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 130.4 nC
- Rise Time (tr): 45 nS
- Drain-Source Capacitance (Cd): 392 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
- Package: TO220
₨200
CompareHY1920P MOSFET Specifications:
- Type Designator: HY1920P
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 375 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 90 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 130.4 nC
- Rise Time (tr): 45 nS
- Drain-Source Capacitance (Cd): 392 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
- Package: TO220
1920p mosfet in pakistan
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