MOSFETs, IGBTs and BJTs
HY3215W MOSFET
HY3215W MOSFET Specifications:
- Type Designator: HY3215W
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 349 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 25 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 130 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 135 nC
- Rise Time (tr): 40 nS
- Drain-Source Capacitance (Cd): 480 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
- Package: TO247
₨300
CompareSpecifications:
- Type Designator: HY3215W
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 349 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 25 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 130 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 135 nC
- Rise Time (tr): 40 nS
- Drain-Source Capacitance (Cd): 480 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
- Package: TO247
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