Transistors
MCR100-8 SCR Thyristor 600V 0.8A
With highly sensitive triggering levels, the MCR100-8 SCR are suitable for all applications, where the available gate current limited, such as capacitive discharge ignitions, motor control in kitchen aids, and overvoltage crowbar protection in low power supplies.
₨6
CompareMCR100-8 SCR Thyristor Specifications:
- Blocking voltage to 600V
- On-state RMS current to 0.8A
- Non-repetitive peak on-state current to 9A
- Maximum peak gate power (PGM): 0.01 W
- Maximum repetitive peak and off-state voltage (VDRM): 600 V
- Maximum average on-state current (IT(AVR)): 1 A
- Maximum RMS on-state current (IT(RMS)): 1 A
- Non-repetitive surge peak on-state current (ITSM): 10 A
- Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
- Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
- Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
- Junction to ambient thermal resistance (RTH(j-a)): 200 K/W
- Junction to case thermal resistance (RTH(j-c)): 50 K/W
- Triggering gate voltage (VGT): 1 V
- Peak on-state voltage drop (VTM): 1.6 V
- Triggering gate current (IGT): 0.2 mA
- Holding current (IH): 2 mA
MCR100-8 SCR Lahore Pakistan. Order MCR100-8 SCR Lahore Pakistan.
Based on 0 reviews
Be the first to review “MCR100-8 SCR Thyristor 600V 0.8A”
You must be logged in to post a review.
Related products
-
Transistors
2N3904 NPN Transistor
2N3904 NPN Transistor Features
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Base- Emitter Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Collector-Base Voltage (VCB) is 60V
- Available in To-92 Package
SKU: n/a -
Transistors
2N2222 NPN Transistor
2N2222 NPN Transistor Features
- Bi-Polar high current NPN Transistor
- DC Current Gain (hFE) is 100
- Continuous Collector current (IC) is 800mA
- Emitter Base Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 30V
- Base Current(IB) is 5mA maximum
- Available in To-92 Package
“>
SKU: n/a -
Transistors
2SC5200 NPN Power Transistor
2SC5200 NPN Power Transistor Features:
- High-power NPN Transistor
- DC Current Gain (hFE) 55 to 160
- Continuous Collector current (IC) is 15A
- Collector-Emitter voltage (VCE) is 230 V
- Collector-Base voltage (VCB) is 230V
- Emitter Base Voltage (VBE) is 5V
- Transition Frequency is 30MHz
- Available in To-264 Package
SKU: n/a -
There are no reviews yet.