G60N100BNTD IGBT
G60N100BNTD IGBT Features
- High-Speed Switching
- Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
- High Input Impedance
- Built-in Fast Recovery Diode
₨335
CompareUsing Fairchild’s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching applications such as UPS, and welder applications.
Using Fairchild’s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching applications such as UPS, and welder applications.
Using Fairchild’s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching applications such as UPS, and welder applications.
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