MOSFETs, IGBTs and BJTs

Features:

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply ranges from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V, and 15V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage
• dV/dt immune
• Gate drive supply range from 10 to 20 V
• Undervoltage lockout
• 3.3 V, 5 V, and 15 V logic input compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Internal set deadtime
• High side output in phase with HIN input
• Low side output out of phase with LIN input

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage
• dV/dt immune
• Gate drive supply range from 10 to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V logic input compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground + /- 5 V offset
• Internal 540ns dead-time
• Lower di/dt gate driver for better noise immunity
• Shut down input turns off both channels