MOSFETs, IGBTs and BJTs
Showing 16–30 of 92 results
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MOSFETs, IGBTs and BJTs
FDH055N15A MOSFET
FDH055N15A MOSFET Specifications
- Type Designator: FDH055N15A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 429 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 118 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 92 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm
SKU: n/a -
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MOSFETs, IGBTs and BJTs
FGA40N65SMD IGBT
Features
- Maximum Junction Temperature: TJ = 175C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
- Fast Switching: EOFF = 6.5 J/A
- Tighten Parameter Distribution
- These Devices are Pb−Free and are RoHS Compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
FGH75T65SQD IGBT
FGH75T65SQD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 375 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 10 nS
Coesⓘ – Output Capacitance, typ: 155 pF
Qgⓘ – Total Gate Charge, typ: 128 nCSKU: n/a -
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MOSFETs, IGBTs and BJTs
FGY75T120SQDN IGBT FGY75T120
FGY75T120SQDN IGBT 75T120 Specifications:
- Type Designator: FGY75T120SQDN
- Type: IGBT + Anti-Parallel Diode
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 790
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Maximum Gate-Emitter Voltage |Vge|, V: 20
- Maximum Collector Current |Ic| @25℃, A: 150
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 96
- Collector Capacity (Cc), typ, pF: 242
- Total Gate Charge (Qg), typ, nC: 399
- Package: TO247
SKU: n/a -
MOSFETs, IGBTs and BJTs
G40H120DF2 IGBT
G40H120DF2 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Marking Code: G40H120DF2
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 37 nS
Coesⓘ – Output Capacitance, typ: 220 pF
Qgⓘ – Total Gate Charge, typ: 158 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
G40H65DFB IGBT 40H65
G40H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
SKU: G40H65DFB-igbt -
MOSFETs, IGBTs and BJTs
G60H65DFB IGBT
G60H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High-frequency converters
SKU: G60H65DFB-IC -
MOSFETs, IGBTs and BJTs
G60T60AK3HD IGBT
G60T60AK3HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 483 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 124 nS
Coesⓘ – Output Capacitance, typ: 224 pF
Qgⓘ – Total Gate Charge, typ: 117 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
G75T60AK3HD IGBT
G75T60AK3HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 390 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 92 nS
Coesⓘ – Output Capacitance, typ: 268 pF
Qgⓘ – Total Gate Charge, typ: 433 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
G75T65AK5HD IGBT
G75T65AK5HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 103 nS
Coesⓘ – Output Capacitance, typ: 278 pF
Qgⓘ – Total Gate Charge, typ: 173 nCSKU: n/a
