transistor
Showing 1–15 of 19 results
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Transistors
2N2222 NPN Transistor
2N2222 NPN Transistor Features
- Bi-Polar high current NPN Transistor
- DC Current Gain (hFE) is 100
- Continuous Collector current (IC) is 800mA
- Emitter Base Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 30V
- Base Current(IB) is 5mA maximum
- Available in To-92 Package
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SKU: n/a -
Transistors
2N2907 PNP Transistor
Features and Technical Specification
- Having a high value of current (max. 600 mA)
- Low voltage value (max. 40 V)
- Comes in different type of packages – TO-92, TO-18
- These are Lead (Pb) free devices
- Collector to Emitter voltage (VCEO) is 40v (max.)
- Collector to Base voltage (VCBO) is 60v (max.)
- Emitter to Base voltage(VEBO) is 5v (normally)
- Maximum value of Collector current is 600mA
- Power dissipation at ambient temperature is about 400mW
- Having DC current gain (hfe) of 100 to 300 (max.)
- Temperature of operation and storage is -65 to +150 °C
SKU: n/a -
Transistors
2N3904 NPN Transistor
2N3904 NPN Transistor Features
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Base- Emitter Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Collector-Base Voltage (VCB) is 60V
- Available in To-92 Package
SKU: n/a -
Transistors
2N3906 PNP Transistor
2N3906 PNP Transistor Features
- Bi-Polar PNP Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Collector Emitter Voltage (VCE) is 40V
- Collector Base Voltage (VCB) is 40V
- Available in To-92 Package
SKU: n/a -
Transistors
2SA1943 PNP Transistor
2SA1943 PNP Transistor Features & Specifications:
- Package is To-264
- Mount type is Through Hole
- Number of terminals – 3
- Polarity is PNP with medium power
- Process technology is advanced
- The error voltage is less
- Switching speed is very fast
- Full-voltage based operation
- It handles high current and high power
- DC Current Gain or hFE ranges from 55 – 160
- Collector current or IC is 15A
- Collector to emitter voltage or VCE is 230Volts
- Collector to base voltage or VCB is 230Volts
- The emitter to base voltage or VBE is 5Volts
- The substitution frequency is 30 MHZ.
- Operating & storing temperature range is -55 to +150 °C
SKU: n/a -
Transistors
2SC5200 NPN Power Transistor
2SC5200 NPN Power Transistor Features:
- High-power NPN Transistor
- DC Current Gain (hFE) 55 to 160
- Continuous Collector current (IC) is 15A
- Collector-Emitter voltage (VCE) is 230 V
- Collector-Base voltage (VCB) is 230V
- Emitter Base Voltage (VBE) is 5V
- Transition Frequency is 30MHz
- Available in To-264 Package
SKU: n/a -
Transistors
A1015 PNP Transistor
Features and Technical Specifications:
- Type: PNP
- Power Dissipation: 0.4watts
- High voltage and High current: Vceo = 50v and Ic = 150mA
- Low Noise: 1dB
- Case Material: molded plastic
- Collector power dissipation: 400mW
- DC current gain: 400
- Collector-Emitter and Collector Base breakdown voltage: 50Vdc
- Base Emitter Saturation Voltage: 1.1Vdc
- Collector-Emitter Saturation Voltage: 0.3Vdc
- Base Emitter voltage: 1.45Vdc
- Complementary to 2SC1815
- Operating Temperature and Storage Temperature: -55℃ to +150℃
SKU: n/a -
Transistors
BC557 PNP Transistor
BC557 PNP Transistor is a transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is provided to the base pin. This is where a PNP transistor differs from an NPN transistor, a Logic state (blue colour) is used to toggle between Ground and Signal Voltage (Emitter-Base Voltage VBE)
SKU: n/a -
