60N60FD1 IGBT 60N60
60N60FD1 IGBT Features
- 60A, 600V, VCE(sat) (typical value)=2.2V@IC=60A
- Low conduction loss
- Fast switching speed
- High input impedance
₨375
CompareThe 60N60FD1 IGBT insulated gate bipolar transistor with field stop (Field Stop) Process production, with low conduction loss and switching loss, can be applied to UPS, SMPS PFC and other fields.
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
The 60N60FD1 IGBT insulated gate bipolar transistor with field stop (Field Stop) Process production, with low conduction loss and switching loss, can be applied to UPS, SMPS PFC and other fields.
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