MOSFETs, IGBTs and BJTs
Showing 31–45 of 65 results
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MOSFETs, IGBTs and BJTs
IR2118 IC DIP8 IR2118S SOP8 Driver
Features- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 to 20 V
- Undervoltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- Output out of phase with input (IR2118) or in phase with input (IR2117 )
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2121 IC DIP8 MOSFET Driver
IR2121 IC Features- Gate drive supply range from 12 to 18 V
- Undervoltage lockout
- Current detection and limiting loop to limit driven power transistor current
- Error lead indicates fault conditions and programs shutdown time
- Output in phase with input
- 2.5 V, 5 V and 15 V input logic compatible
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR21365S IC SOP28 MOSFET Driver
IR21365S IC Features
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- – dV/dt immune
- Gate drive supply range from (IR21363/IR21365/ IR21366/IR21367)
- Undervoltage lockout for all channel
- ls 28-Lead SOIC
- Over-current shutdown turns off all six drivers
- Independent 3 half-bridge drivers 28-Lead
- PDIP Matched propagation delay for all channels
- Cross-conduction prevention logic
- 44-Lead PLCC w/o 12 leads
- Lowside outputs out of phase with inputs.
SKU: IR21365S-IC -
MOSFETs, IGBTs and BJTs
IR2136S IC SOP28 MOSFET Driver
IR2136S IC Features- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply ranges from 10 V to 20 V (IR2136/IR21368), 11.5 V to 20 V (IR21364), or 12 V to 20 V (IR21363/IR21365/IR21366)
- Under-voltage lockout for all channels
- Over-current shutdown turns off all six drivers
- Independent 3 half-bridge drivers
- Matched propagation delay for all channels
- Cross-conduction prevention logic
- Low side output out of phase with inputs, high side outputs out of phase. (IR2136/IR21363/IR21365/IR21366/IR21368)
- Low side and high side outputs in phase with inputs. (IR21364)
- 3.3 V logic compatible
- Lower di/dt gate drive for better noise immunity
- Externally programmable delay for automatic fault clear
- LEAD-FREE and RoHS Compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2151 IC DIP8 MOSFET Driver
IR2151 IC Features
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Undervoltage lockout
- Programmable oscillator frequency
- VOFFSET Duty Cycle IO+/VOUT Deadtime (typ.) 600V max. 1.2 µs
- Matched propagation delay for both channels Low side output in phase with RT
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2153 IC DIP8 MOSFET Driver
IR2153 IC Features- Integrated 600 V half-bridge gate driver
- 15.6 V zener clamp on VCC
- True micropower start-up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1 V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Excellent latch immunity on all inputs and outputs
- ESd protection on all leads
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2186S IC SOP8 MOSFET Driver
IR2186S IC Features
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V and 5 V logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current 4 A / 4 A
- RoHS compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF1407 MOSFET 75V
IRF1407 MOSFET Features:
- Mounting: THT
- Package: TO-220
- Polarity: N
- Qgd typ nominal: 54nC
- RthJC max: 0.45K/W
- Tj max: 175°C
- VDS max: 75V
- Ptot @ TA=25°C: max 330W
- VGS max: 20V
- Type: N
- Product Group: TO-220
- Encryption: no
- Additional Information: Electrical
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF2807 MOSFET 75V
IRF2807 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF3205 MOSFET 55V
IRF3205 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF3710 MOSFET 100V
IRF3710 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF740 MOSFET 400V
IRF740 MOSFET Features:
- 10A, 400V
- rDS(ON) = 0.550Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards”
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF9540 MOSFET 100V Price in Pakistan
IRF9540 MOSFET Features:
- Mounting Type: Through Hole
- FET Type: MOSFET P-Channel, Metal Oxide
- Drain to Source Voltage (Vdss): 100V
- Current – Continuous Drain (Id) @ 25° C: 19A
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V
- Input Capacitance (Ciss) @ Vds: 1400pF @ 25V
- Power: – Max 150W
- Packaging: Tube
- Gate Charge (Qg) @ Vgs: 61nC @ 10V
- Package / Case: TO-220-3
- FET Feature: Standard
- Lead-Free Status: Contains Lead
- RoHS Status: RoHS Non-Compliant
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SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF9Z24N MOSFET
Type Designator: IRF9Z24N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 45 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 12 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 19(max) nC
trⓘ – Rise Time: 55 nS
Cossⓘ – Output Capacitance: 170 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.175 OhmSKU: n/a -
MOSFETs, IGBTs and BJTs
IRF9Z34N MOSFET
Type Designator: IRF9Z34N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 68 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 19 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 35(max) nC
trⓘ – Rise Time: 55 nS
Cossⓘ – Output Capacitance: 280 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.1 OhmSKU: n/a
