MOSFETs, IGBTs and BJTs
Showing 46–54 of 54 results
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MOSFETs, IGBTs and BJTs
K75T60 IGBT IKW75N60T 600V 75A
K75T60 IGBT Features and Specifications:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature of 175℃
- Short circuit withstand time 5micro seconds
- Positive temperature coefficient in VCE (sat)
- Very tight parameter distribution
- High ruggedness, temperature-stable behavior
- Very high switching speed
- Low Electro Magnetic Interference
- Very soft and fast recovery anti-parallel Emitter Controlled HE diode
- Pb-free lead plating
- RoHS compliant
SKU: n/a -
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MOSFETs, IGBTs and BJTs
NCEP02T10 MOSFET 02T10
Features
- VDS =200V,ID =100A
RDS(ON) <11mΩ @ VGS=10V - Excellent gate charge x RDS(on) product
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectificationSKU: n/a - VDS =200V,ID =100A
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MOSFETs, IGBTs and BJTs
NCEP85T16 MOSFET 85T16
NCEP85T16 MOSFET 85T16 Specifications:
- Type Designator: NCEP85T16
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 220 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
- Maximum Drain Current |Id|: 160 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 105 nC
- Rise Time (tr): 29 nS
- Drain-Source Capacitance (Cd): 1520 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
- Package: TO220
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP250 IC DIP8 TLP250S SOP8 Driver
Features:
- Input threshold current: IF = 5mA (max.)
- Supply current: 11mA (max.)
- Supply voltage: 10~35V
- Output current: ±1.5A (max.)
- Switching time: tpHL, tpLH = 0.5μs (max.)
- Isolation voltage: 2500 Vrms (min.)
- UL recognized: UL1577, file no. E67349
- Option (D4) type
- VDE approved: DIN EN 60747-5-2, certificate No. 40011913
- Maximum operating insulation voltage: 1140VPK
- Highest permissible over voltage: 6000VPK
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SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP350 IC DIP8 TLP350S SOP8 Driver
Features:
- Peak output current : IO = ±2.5A (max)
- Guaranteed performance over temperature: -40 to 100°C
- Supply current: ICC = 2 mA (max)
- Power supply voltage: VCC = 15 to 30 V
- Threshold input current : IFLH = 5 mA (max)
- Switching time (tpLH/tpHL): 500 ns (max)
- Common mode transient immunity: 15 kV/μs
- Isolation voltage: 3750 Vrms
- UL Recognized : UL1577,File No.E67349
- Option(D4)
- VDE Approved: DIN EN 60747-5-2
- Maximum Operating Insulation Voltage: 890VPK
- Highest Permissible Over Voltage: 6000VPK
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP352 IC DIP8 TLP352S SOP8 Driver
Features:
- Buffer logic type (totem pole output)
- Output peak current: ±2.5 A (max)
- Operating temperature: -40 to 125 C
- Supply current: 3.0 mA (max)
- Supply voltage: 15 to 30 V
- Threshold input current: 5 mA (max)
- Propagation delay time: 200 ns (max)
- Common-mode transient immunity: ±20 kV/µs (min)
- Isolation voltage: 3750 Vrms (min)
- Safety standards
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5
SKU: n/a -
MOSFETs, IGBTs and BJTs
XNF15N60T IGBT 15A 600V
XNF15N60T IGBT 15A 600V Specifications:
- Type Designator: XNF15N60T
- Type: IGBT
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 38
- Maximum Collector-Emitter Voltage |Vce|, V: 600
- Maximum Gate-Emitter Voltage |Vge|, V: 30
- Maximum Collector Current |Ic| @25℃, A: 30
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.2
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 36
- Collector Capacity (Cc), typ, pF: 37
- Total Gate Charge (Qg), typ, nC: 25
- Package: TO-220F
SKU: n/a