MOSFETs, IGBTs and BJTs
Showing 76–90 of 92 results
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MOSFETs, IGBTs and BJTs
NCE82H140 MOSFET
Type Designator: NCE82H140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 220 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 140 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 158 nC
trⓘ – Rise Time: 42 nS
Cossⓘ – Output Capacitance: 445 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0052 OhmSKU: n/a -
MOSFETs, IGBTs and BJTs
NCEP02T10 MOSFET 02T10
Features
- VDS =200V,ID =100A
RDS(ON) <11mΩ @ VGS=10V - Excellent gate charge x RDS(on) product
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectificationSKU: n/a - VDS =200V,ID =100A
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MOSFETs, IGBTs and BJTs
NCEP85T16 MOSFET 85T16
NCEP85T16 MOSFET 85T16 Specifications:
- Type Designator: NCEP85T16
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 220 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
- Maximum Drain Current |Id|: 160 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 105 nC
- Rise Time (tr): 29 nS
- Drain-Source Capacitance (Cd): 1520 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
- Package: TO220
SKU: n/a -
MOSFETs, IGBTs and BJTs
STFW3N150 MOSFET
STFW3N150 MOSFET Details:
Marking Code: 3N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 63 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ – Maximum Drain Current: 2.5 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 29.3 nC
trⓘ – Rise Time: 47 nS
Cossⓘ – Output Capacitance: 102 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 9 OhmSKU: n/a -
IC and IC Sockets, MOSFETs, IGBTs and BJTs
TD62002
Features
z Output current (single output): 500 mA (max)
z High sustaining voltage output: 50 V (min)
z Output clamp diodes
z Inputs compatible with various types of logic
z Package type
APG: DIP-16 pin (Pb free package)
AFG: SOP-16 pin (Pb free package)SKU: n/a -
MOSFETs, IGBTs and BJTs
TLP2160 SOP
Features
(1) Inverter logic type (totem pole output)
(2) Package: SO8
(3) Operating temperature range: -40 to 125
(4) Supply voltage: 2.7 to 5.5 V
(5) Data transfer rate: 20 MBd (typ.) (NRZ)
(6) Threshold input current: 3.5 mA (max)
(7) Supply current: 5 mA (max)
(8) Common-mode transient immunity: ±20 kV/µs (min)
(9) Isolation voltage: 2500 Vrms (min)SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP250 IC DIP8 TLP250S SOP8 Driver
Features:
- Input threshold current: IF = 5mA (max.)
- Supply current: 11mA (max.)
- Supply voltage: 10~35V
- Output current: ±1.5A (max.)
- Switching time: tpHL, tpLH = 0.5μs (max.)
- Isolation voltage: 2500 Vrms (min.)
- UL recognized: UL1577, file no. E67349
- Option (D4) type
- VDE approved: DIN EN 60747-5-2, certificate No. 40011913
- Maximum operating insulation voltage: 1140VPK
- Highest permissible over voltage: 6000VPK
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SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP350 IC DIP8 TLP350S SOP8 Driver
Features:
- Peak output current : IO = ±2.5A (max)
- Guaranteed performance over temperature: -40 to 100°C
- Supply current: ICC = 2 mA (max)
- Power supply voltage: VCC = 15 to 30 V
- Threshold input current : IFLH = 5 mA (max)
- Switching time (tpLH/tpHL): 500 ns (max)
- Common mode transient immunity: 15 kV/μs
- Isolation voltage: 3750 Vrms
- UL Recognized : UL1577,File No.E67349
- Option(D4)
- VDE Approved: DIN EN 60747-5-2
- Maximum Operating Insulation Voltage: 890VPK
- Highest Permissible Over Voltage: 6000VPK
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP352 IC DIP8 TLP352S SOP8 Driver
Features:
- Buffer logic type (totem pole output)
- Output peak current: ±2.5 A (max)
- Operating temperature: -40 to 125 C
- Supply current: 3.0 mA (max)
- Supply voltage: 15 to 30 V
- Threshold input current: 5 mA (max)
- Propagation delay time: 200 ns (max)
- Common-mode transient immunity: ±20 kV/µs (min)
- Isolation voltage: 3750 Vrms (min)
- Safety standards
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP5702 SOP
Features
- (1) Buffer logic type (totem pole output)
- (2) Output peak current: ±2.5 A (max)
- (3) Operating temperature: -40 to 110C
- (4) Supply current: 3.0 mA (max)
- (5) Supply voltage: 15 to 30 V
- (6) Threshold input current: 5 mA (max)
- (7) Propagation delay time: tpHL/tpLH= 200 ns (max)
- (8) Common-mode transient immunity: ±20 kV/μs (min)
- (9) Isolation voltage: 5000 Vrms (min)
- (10) Safety standard
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP5751 SOP
Features
- Buffer logic type (totem pole output)
- Output peak current: ± 1.0 A (max)
- Operating temperature: -40 to 110
- Supply current: 3.0 mA (max)
- Supply voltage: 15 to 30 V
- Threshold input current: 4 mA (max)
- Propagation delay time: 150 ns (max)
- Common-mode transient immunity: ±35 kV/µs (min)
- Isolation voltage: 5000 Vrms (min)
SKU: n/a -
MOSFETs, IGBTs and BJTs
UCC23313DWYR
Features
• 3.75-kVRMS single channel isolated gate driver with
opto-compatible input
• Pin-to-pin, drop in upgrade for opto isolated gate
drivers
• 4.5-A source, 5.3-A sink, peak output current
• Maximum 33-V output driver supply voltage
• 8-V (B) and 12-V VCC UVLO options
• Rail-to-rail output
• 105-ns (maximum) propagation delay
• 25-ns (maximum) part-to-part delay matching
• 35-ns (maximum) pulse width distortion
• 150-kV/μs (minimum) common-mode transient
immunity (CMTI)
• Isolation barrier life > 50 Years
• 13-V reverse polarity voltage handling capability
on input stage supporting interlock
• Stretched SO-6 package with > 8.5-mm creepage
and clearance
• Operating junction temperature, TJ: –40°C to
+150°C
• Safety-related certifications (Planned):
– 6000-VPK basic isolation per DIN V VDE
V0884-11: 2017-01
– 3.75-kVRMS isolation for 1 minute per UL 1577
– CQC certification per GB4943.1-2011SKU: n/a -
MOSFETs, IGBTs and BJTs
UCC27712 SOP
Features
• High-side and low-side configuration
• Dual inputs with output interlock and 150-ns
deadtime
• Fully operational up to 620-V, 700-V absolute
maximum on HB pin
• 10-V to 20-V VDD recommended range
• Peak output current 2.8-A sink, 1.8-A source
• dv/dt immunity of 50 V/ns
• Logic operational up to –11 V on HS pin
• Negative voltage tolerance on inputs of –5 V
• Large negative transient safe operating area
• UVLO protection for both channels
• Small propagation delay (100-ns typical)
• Delay matching (12-ns typical)
• Floating channel designed for bootstrap operation
• Low quiescent current
• TTL and CMOS compatible inputs
• Industry standard SOIC-8 package
• All parameters specified over a temperature range,
–40 °C to +125 °CSKU: n/a -
MOSFETs, IGBTs and BJTs
XNF15N60T IGBT 15A 600V
XNF15N60T IGBT 15A 600V Specifications:
- Type Designator: XNF15N60T
- Type: IGBT
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 38
- Maximum Collector-Emitter Voltage |Vce|, V: 600
- Maximum Gate-Emitter Voltage |Vge|, V: 30
- Maximum Collector Current |Ic| @25℃, A: 30
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.2
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 36
- Collector Capacity (Cc), typ, pF: 37
- Total Gate Charge (Qg), typ, nC: 25
- Package: TO-220F
SKU: n/a
