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STC3028 Digital Temperature And Humidity Controller
STC3028 Digital Temperature And Humidity Controller Specifications:
18650 Lithium Battery Charger Protection Board Module
Specifications:
2DM860 Digital Stepper Driver
2DM860 Digital Stepper Driver Specifications:
433Mhz RF Transmitter and Receiver Module
<strong>Materials:
at first let’s take a look for what we need :
1) Â 2 Arduino Board “I used Uno”
2) RF 315MHz or 433MHz transmitter-receiver module .
3) jumper wire .
4) BreadBoard .
5)External Power supply (9V Battery *2) “Optional”
5815M RDA5815M QFN-20 Signal IC
5815M IC RDA5815M QFN-20 Signal IC Specifications:
MG996R Servo Motor
MG996R Servo Motor Specifications:
ADC0809 Converter 8-Bit Analog to Digital
ADC0809 Converter 8-Bit Analog to Digital Features
Specifications
AVRISP MKII Programmer
AVRISP MKII Programmer FEATURES
XL4015 5A DC-DC Step Down Adjustable Power Supply Module Buck Converter
XL4015 5A DC Power Supply Module Buck Converter Specification
W1209 LED Digital Thermostat Temperature Control Module
Specifications
Multi Servo Motor Tester CCPM ESC
Servo Motor Tester CCPM ESC Specifications:
Sensor Shield V4.0 for Arduino
Sensor Shield V4 Arduino Specifications:
TQFP 32 Pin SMD IC Socket
TQFP 32 Pin SMD IC Socket Specifications:
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YGW40N65F1 IGBT
YGW40N65F1 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 188 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 80 nS
Coesⓘ – Output Capacitance, typ: 100 pF
Qgⓘ – Total Gate Charge, typ: 90 nC
G60T60AK3HD IGBT
G60T60AK3HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 483 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 124 nS
Coesⓘ – Output Capacitance, typ: 224 pF
Qgⓘ – Total Gate Charge, typ: 117 nC
G75T65AK5HD IGBT
G75T65AK5HD IGBT Features: Â
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 103 nS
Coesⓘ – Output Capacitance, typ: 278 pF
Qgⓘ – Total Gate Charge, typ: 173 nC
FGH75T65SQD IGBT
 FGH75T65SQD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 375 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 10 nS
Coesⓘ – Output Capacitance, typ: 155 pF
Qgⓘ – Total Gate Charge, typ: 128 nC
G75T65AK5SD IGBT
G75T65AK5SD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 103 nS
Coesⓘ – Output Capacitance, typ: 278 pF
Qgⓘ – Total Gate Charge, typ: 173 nC
YGW75N65F1 IGBT
 YGW75N65F1 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 500 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.2 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 40 nS
Coesⓘ – Output Capacitance, typ: 200 pF
Qgⓘ – Total Gate Charge, typ: 260 nC
KGF75N60KDB IGBT
KGF75N60KDB IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 357 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 50 nS
Coesⓘ – Output Capacitance, typ: 250 pF
Qgⓘ – Total Gate Charge, typ: 250 nC
KGF75N65KDF IGBT
KGF75N65KDF IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 484 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 115 nS
Coesⓘ – Output Capacitance, typ: 198 pF
Qgⓘ – Total Gate Charge, typ: 128 nC
MM75GAU65BX IGBT
MM75GAU65BX IGBT Features:
Applications:
K75EEH5 IGBT
K75EEH5 IGBT Features: Â
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEH5
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 395 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 33 nS
Coesⓘ – Output Capacitance, typ: 130 pF
Qgⓘ – Total Gate Charge, typ: 160 nC
G40H120DF2 IGBT
G40H120DF2 IGBT Features: Â
Type: IGBT + Anti-Parallel Diode
Marking Code: G40H120DF2
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 37 nS
Coesⓘ – Output Capacitance, typ: 220 pF
Qgⓘ – Total Gate Charge, typ: 158 nC
60T65FD IGBT
60T65FD IGBT Features: Â
Type: IGBT + Anti-Parallel Diode
Marking Code: 60T65FD
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 450 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 190 nS
Coesⓘ – Output Capacitance, typ: 200 pF
Qgⓘ – Total Gate Charge, typ: 110 nC
G75T60AK3HD IGBT
G75T60AK3HD IGBT Features: Â
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 390 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 92 nS
Coesⓘ – Output Capacitance, typ: 268 pF
Qgⓘ – Total Gate Charge, typ: 433 nC
DB37 Cover
DB37 Cover Features :
DB50 Male Connector
Features