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STC3028 Digital Temperature And Humidity Controller
STC3028 Digital Temperature And Humidity Controller Specifications:
18650 Lithium Battery Charger Protection Board Module
Specifications:
2DM860 Digital Stepper Driver
2DM860 Digital Stepper Driver Specifications:
433Mhz RF Transmitter and Receiver Module
<strong>Materials:
at first let’s take a look for what we need :
1) 2 Arduino Board “I used Uno”
2) RF 315MHz or 433MHz transmitter-receiver module .
3) jumper wire .
4) BreadBoard .
5)External Power supply (9V Battery *2) “Optional”
5815M RDA5815M QFN-20 Signal IC
5815M IC RDA5815M QFN-20 Signal IC Specifications:
AT89C51 Microcontroller 89C51
AT89C51 Microcontroller Features
STM32F429 Discovery Board
STM32F429 Discovery Board Features
MG946R Servo Motor
MG946R Servo Motor Features:
VS838 IR Infrared Receiver Module
VS838 Infrared Receiver Module IR Features
DS18B20 Temperature Sensor
DS18B20 Temperature Sensor Key Features
QTR-5RC Line Sensor Obstacle Avoidance Infrared Tracking Sensor Module
QTR 5RC Line Sensor Specifications:
ADS1115 16-Bit ADC 4 Channel Module with Programmable Gain Amplifier
ADS1115 Module 16-bit ADC 4 Channel Specifications:
LTC1871 Boost Power Module High Power DC-DC 100W Adjustable Output 3.5-35v Step up Power Supply Converter Module Board with LED Digital Display Voltmeter
LTC1871 Boost Power Module High Power DC-DC 100W Adjustable Output 3.5-35v Step up Power Supply Converter Module Board with LED Digital Display Voltmeter
Specifications:
W5500 Ethernet Module
W5500 Ethernet Module Features
Orange Pi PC H3 Quad-Core Development Board
Specifications:
2N3906 PNP Transistor
2N3906 PNP Transistor Features
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CD14538BM SOP
CD14538BM SOP Features:
CD14538BE DIP
CD4503BM SOP
The CD4503BM is a Hex Non-inverting Buffer with 3-state outputs having high sink and source-current capability. Two disable controls are provided, one of which controls four buffers and the other controls the remaining two buffers.
Applications
Industrial, Automation & Process Control, Signal Processing
CD4503BE IC CMOS
Technical Specifications:
IRFB4115 MOSFET
IRFB4115 mosfet details:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 380 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ – Maximum Drain Current: 104 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 77 nC
trⓘ – Rise Time: 73 nS
Cossⓘ – Output Capacitance: 490 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.011 Ohm
IRFB4110 MOSFET
Type Designator: IRFB4110
Marking Code: IRF4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 370 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 180 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 150 nC
trⓘ – Rise Time: 67 nS
Cossⓘ – Output Capacitance: 670 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0045 Ohm
STFW3N150 MOSFET
STFW3N150 MOSFET Details:
Marking Code: 3N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 63 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ – Maximum Drain Current: 2.5 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 29.3 nC
trⓘ – Rise Time: 47 nS
Cossⓘ – Output Capacitance: 102 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 9 Ohm
IRFBG30 MOSFET
Type Designator: IRFBG30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 125 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 3.1 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 80(max) nC
trⓘ – Rise Time: 25 nS
Cossⓘ – Output Capacitance: 140 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 5 Ohm
IRF9Z34N MOSFET
Type Designator: IRF9Z34N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 68 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 19 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 35(max) nC
trⓘ – Rise Time: 55 nS
Cossⓘ – Output Capacitance: 280 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.1 Ohm
IRF9Z24N MOSFET
Type Designator: IRF9Z24N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 45 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 12 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 19(max) nC
trⓘ – Rise Time: 55 nS
Cossⓘ – Output Capacitance: 170 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.175 Ohm
7LB179 SOP IC
Features:
• Designed for high-speed multipoint data transmission over long cables
• Operates with pulse widths as low as 30 ns
• Low supply current: 5 mA max
• Meets or exceeds the standard requirements ofANSI RS-485 and ISO 8482:1987(E)
• Common-mode voltage range of − 7 V to 12 V
• Positive-and negative-output current limiting
• Driver thermal shutdown protection
• Pin compatible with the SN75179B
D151821-0571 IC
The D151821-0571 is an integrated circuit (IC) from NEC. It is a low-power, low-voltage, high-speed CMOS logic device with a 24-pin small outline package (SOP). Features: Low power consumption Low voltage operation High speed operation 24-pin SOP package High noise immunity Low input and output leakage current High noise margin Applications: The D151821-0571 is suitable for a wide range of applications including logic gates, logic buffers, and other logic functions. It can be used in consumer electronics, automotive, industrial, and medical applications.
2SD669 Transistor
2SD669 Transistor
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 14 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –
2SB649 Transistor
2SB649 Transistor details:
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –
Package: TO126
TNY398 DIP IC
Features:
• Operates from ±5V to ±18V supplies
• Less than 10µs acquisition time
• TTL, PMOS, CMOS compatible logic input
• 0.5mV typical hold step at CH=0.01µF
• Low input offset
• 0.002% gain accuracy
• Low output noise in hold mode
• Input characteristics do not change during hold mode
• High supply rejection ratio in sample or hold
• Wide bandwidth
UC3846N DIP IC
UC3846DW SOP
Features:
