MOSFETs, IGBTs and BJTs
Showing 61–75 of 92 results
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MOSFETs, IGBTs and BJTs
IRFB4110 MOSFET
Type Designator: IRFB4110
Marking Code: IRF4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 370 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 180 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 150 nC
trⓘ – Rise Time: 67 nS
Cossⓘ – Output Capacitance: 670 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0045 OhmSKU: n/a -
MOSFETs, IGBTs and BJTs
IRFB4115 MOSFET
IRFB4115 mosfet details:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 380 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ – Maximum Drain Current: 104 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 77 nC
trⓘ – Rise Time: 73 nS
Cossⓘ – Output Capacitance: 490 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.011 OhmSKU: n/a -
MOSFETs, IGBTs and BJTs
IRFBG30 MOSFET
Type Designator: IRFBG30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 125 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 3.1 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 80(max) nC
trⓘ – Rise Time: 25 nS
Cossⓘ – Output Capacitance: 140 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 5 OhmSKU: n/a -
MOSFETs, IGBTs and BJTs
IRFP4468 MOSFET
IRFP4468 MOSFET Specifications:
- Type Designator: IRFP4468
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 520 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 290 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 360 nC
- Rise Time (tr): 230 nS
- Drain-Source Capacitance (Cd): 1360 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
- Package: TO247AC
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRFP4568 MOSFET
IRFP4568 MOSFET Specifications:
- Type Designator: IRFP4568
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 517 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 171 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 151 nC
- Rise Time (tr): 119 nS
- Drain-Source Capacitance (Cd): 977 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm
- Package: TO247AC
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRFP4668 MOSFET
IRFP4668 MOSFET Specifications:
- Type Designator: IRFP4668
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 520 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 130 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 161 nC
- Rise Time (tr): 105 nS
- Drain-Source Capacitance (Cd): 810 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
- Package: TO247AC
SKU: n/a -
MOSFETs, IGBTs and BJTs
K40T120 IGBT 40T120
K40T120 IGBT Features:
- Short circuit withstand time – 10us
- Designed for :
– Frequency Converters
– Uninterrupted Power Supply - TrenchStop and Fieldstop technology for 1200 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature-stable behaviour technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat) - Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS-compliant
SKU: K40T120-IC -
MOSFETs, IGBTs and BJTs
K75EEH5 IGBT
K75EEH5 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEH5
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 395 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 33 nS
Coesⓘ – Output Capacitance, typ: 130 pF
Qgⓘ – Total Gate Charge, typ: 160 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
K75T60 IGBT IKW75N60T 600V 75A
K75T60 IGBT Features and Specifications:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature of 175℃
- Short circuit withstand time 5micro seconds
- Positive temperature coefficient in VCE (sat)
- Very tight parameter distribution
- High ruggedness, temperature-stable behavior
- Very high switching speed
- Low Electro Magnetic Interference
- Very soft and fast recovery anti-parallel Emitter Controlled HE diode
- Pb-free lead plating
- RoHS compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
KGF75N60KDB IGBT
KGF75N60KDB IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 357 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 50 nS
Coesⓘ – Output Capacitance, typ: 250 pF
Qgⓘ – Total Gate Charge, typ: 250 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
KGF75N65KDF IGBT
KGF75N65KDF IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 484 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 115 nS
Coesⓘ – Output Capacitance, typ: 198 pF
Qgⓘ – Total Gate Charge, typ: 128 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
MM75GAU65BX IGBT
MM75GAU65BX IGBT Features:
- 650V IGBT chip in trench FS-technology
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Fast switching and short tail current
- Free wheeling diodes with fast and soft reverse recovery
Applications:
- UPS
- Motor Control
- General Purpose Inverters
SKU: n/a -
